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DG1411, dg1412, dg1413 www.vishay.com vishay siliconix s13-2467-rev. b, 02-dec-13 1 document number: 62749 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 precision monolithic quad spst cmos analog switches description the DG1411, dg1412, dg1413 are 15 v precision monolithic quad single-pole single-throw (spst) cmos analog switches. built on a new cmos process, the vishay siliconix DG1411, dg1412, and dg1413 offer low on-resistance of 1.5 ? . the low and flat resistance over the full signal range ensures excellent linearity and low signal distortion. the new cmos platform provides low power dissipation, minimi zed parasitic capa citance, and low charge injection. the devices operate from either a single 4.5 v to 24 v power supply, or from dual 4.5 v to 15 v power supplies. the analog switches don't require a v l logic supply, while all digital inputs have 0.8 v and 2 v logic thresholds to ensure low-voltage ttl / cmos compatibility. the DG1411, dg1412, and dg1413 are bi-directional and support analog signals up to the supply voltage when on, and block them when off. the devices each feature four independently selectable spst switches. the DG1411 is normally closed, while the dg1412 is normally open. the dg1413 has two normally open and two normally closed switches with guaranteed break-before-make operation. combined with fast 100 ns switching times, the improved performance of the DG1411, dg1412, and dg1413 make the devices ideal for signal switching and relay replacement in data acquisition, indust rial control and automation, communication, and a/v systems, in addition to medical instrumentation and auto mated test equipment. the switches are available in rohs-compliant, halogen-free tssop16 and qfn16 4 mm by 4 mm packages. features ? 35 v supply max. rating ? on-resistance: 1.5 ? ? on-resistance flatness: 0.3 ? ? channel to channel on-resistance match: 0.1 ? ? supports single and dual supply operation ? fully specified at 15 v, 5 v, and +12 v ? integrated v l supply ? 3 v logic compatible ? low parasitic capacitance: c s(off) : 11 pf, c d(on) : 87 pf ? rail to rail signal handling ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 benefits ? low insertion loss ? low distortion ? break-before-make switching ? low charge injection over the full signal range applications ? medical and healthcare equipment ? data acquisition system ? industrial control and automation ? test and measurement equipment ? communication systems ? battery powered systems ? sample and hold circuits ? audio and video signal switching ? relay replacement functional block diagram and pin configuration - DG1411 notes ? qfn exposed pad tied to v- ? n.c. = no connect ? switches shown fo r logic 0 input truth table - DG1411 logic switch 0on 1off DG1411en v- v+ s4 gnd s3 n.c. s1 s2 1 2 3 12 11 10 4 9 5678 16 15 14 13 to p v i ew qfn-16 (4 mm x 4 mm) d1 in1 in2 d2 d4 in4 in3 d3 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 top view in1 in2 d1 d2 s1 s2 v- v+ gnd n.c. s4 s3 d4 d3 in4 in3 tssop DG1411eq
DG1411, dg1412, dg1413 www.vishay.com vishay siliconix s13-2467-rev. b, 02-dec-13 2 document number: 62749 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 functional block diagram and pin configuration - dg1412 notes ? qfn exposed pad tied to v- ? n.c. = no connect ? switches shown fo r logic 0 input functional block diagram and pin configuration - dg1413 notes ? qfn exposed pad tied to v- ? n.c. = no connect ? switches shown fo r logic 0 input truth table - dg1412 logic switch 0off 1on dg1412en v- v+ s4 gnd s3 n.c. s1 s2 1 2 3 12 11 10 4 9 5678 16 15 14 13 to p v i ew qfn-16 (4 mm x 4 mm) d1 in1 in2 d2 d4 in4 in3 d3 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 top view in1 in2 d1 d2 s1 s2 v- v+ gnd n.c. s4 s3 d4 d3 in4 in3 tssop dg1412eq truth table - dg1413 logic switches 1, 4 switches 2, 3 0offon 1onoff dg1413en v- v+ s4 gnd s3 n.c. s1 s2 1 2 3 12 11 10 4 9 5678 16 15 14 13 top view qfn-16 (4 mm x 4 mm) d1 in1 in2 d2 d4 in4 in3 d3 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 top view in1 in2 d1 d2 s1 s2 v- v+ gnd n.c. s4 s3 d4 d3 in4 in3 tssop dg1413eq
DG1411, dg1412, dg1413 www.vishay.com vishay siliconix s13-2467-rev. b, 02-dec-13 3 document number: 62749 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those in dicated in the operational sectio ns of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. device options part number configuration switch function temperature range package DG1411en-t1-ge4 quad spst nc -40 c to +125 c qfn (4 mm x 4 mm) 16l (variation 2) dg1412en-t1-ge4 quad spst no -40 c to +125 c qfn (4 mm x 4 mm) 16l (variation 2) dg1413en-t1-ge4 quad spst nc/no -40 c to +125 c qfn (4 mm x 4 mm) 16l (variation 2) DG1411eq-t1-ge3 quad spst nc -40 c to +125 c tssop-16 dg1412eq-t1-ge3 quad spst no -40 c to +125 c tssop-16 dg1413eq-t1-ge3 quad spst nc/no -40 c to +125 c tssop-16 absolute maximum ratings electrical parameter conditions limits unit v+ reference to gnd -0.3 v to +25 v v v- reference to gnd +0.3 v to -25 v v+ to v- +35 analog inputs (s or d) v- (-0.3 v) to v+ (+0.3 v) digital inputs gnd (-0.3 v) to v+ (+0.3 v) maximum continuous switch current tssop-16, t a = 25 c 190 ma qfn (4 mm x 4 mm) 16l, t a = 25 c 250 tssop-16, t a = 125 c 90 qfn (4 mm x 4 mm) 16l, t a = 125 c 100 maximum pulse switch current pulse at 1 ms, 10 % duty cycle 500 thermal resistance tssop-16 130 c/w qfn (4 mm x 4 mm) 16l 32 temperature operating temperature -40 to 125 c max. operating junction temperature 150 operating junction temperature 125 storage temperature -65 to 150 recommended operating range electrical minimum maximum unit in 4.5 16.5 v
DG1411, dg1412, dg1413 www.vishay.com vishay siliconix s13-2467-rev. b, 02-dec-13 4 document number: 62749 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical characteristics parameter symbol test conditions unless otherwise specified v+ = 15 v, v- = -15 v v inh = 2 v, v inl = 0.8 v +25 c -40 c to +85 c -40 c to +125 c typ./max. unit analog switch analog signal range v analog v- to v+ - v drain-source on-resistance r ds(on) v s = 10 v, i s = -10 ma; see fig. 23 v+ = +13.5 v, v- = -13.5 v 1.5 - - typ. ? 1.8 2.3 2.6 max. on-resistance flatness r flat(on) v s = 10 v, i s = -10 ma 0.3 - - - ? 0.36 0.45 0.48 max. on-resistance matching ? r ds(on) 0.08 - - typ. 0.18 0.19 0.21 max. switch off leakage current i s /i d(off) v+ = +16.5 v, v- = -16.5 v v s = 10 v, v d = 10 v; see fig. 24 0.03 - - typ. na 0.55 2 12.5 max. channel on leakage current i d(on) v s = v d = 10 v; see fig. 25 0.15 - - typ. 2 4 35 max. digital control input, high voltage v inh -- 2 v min. v input, low voltage v inl -- 0.8v max. input leakage i in v in = v gnd or v+ 0.005 - - typ. a -- 0.1max. digital input capacitance c in 3.5 - - typ. pf dynamic characteristics break-before-make time t open v s1 = v s2 = 10 v, see fig. 31; r l = 300 ? , c l = 35 pf 36 - - typ. ns - - 10 min. tur n-on time t on v s = 10 v, see fig. 30 r l = 300 ? , c l = 35 pf 100 - - typ. 150 170 190 max. turn-off time t off 64 - - typ. 120 140 160 max. charge injection q inj c l = 1 nf, r gen = 0 ? , v s = 0 v see fig. 32 -20 - - typ. pc off isolation oirr c l = 5 pf, r l = 50 ? , 100 khz -80 - - typ. db cross talk x talk c l = 5 pf, r l = 50 ? , 1 mhz -100 - - typ. insertion loss f = 1 mhz, r l = 50 ? , c l = 5 pf -0.08 - typ. total harmonic distortion thd r l = 110 ? , 15 v p-p , f = 20 hz to 20 khz 0.014 - - typ. % bandwidth, -3db bw c l = 5 pf, r l = 50 ? 210 - - typ. mhz source off capacitance c s(off) f = 1 mhz, v s = 0 v 11 - - typ. pf drain off capacitance c d(off) 24 - - typ. drain on capacitance c d(on) 87 - - typ. power requirements power supply range gnd = 0 v 4.5/ 16.5 min./max. v power supply current i+ digital inputs 0 or v+ v+ = +16.5 v, v- = -16.5 v 0.001 - - typ. a -- 1max. in1 = in2 = in3 = in4 = 5 v 220 - - typ. - - 380 max. i- digital inputs 0 or v+ 0.001 - - typ. -- 1max.
DG1411, dg1412, dg1413 www.vishay.com vishay siliconix s13-2467-rev. b, 02-dec-13 5 document number: 62749 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical characteristics - single 12 v supply parameter symbol test conditions unless otherwise specified v+ = 12 v, v- = 0 v v inh = 2 v, v inl = 0.8 v +25 c -40 c to +85 c -40 c to +125 c typ./max. unit analog switch analog signal range v analog 0 v to v+ v drain-source on-resistance r ds(on) v s = 0 v to 10 v, i s = -10 ma; see fig. 23, v+ = 10.8 v, v- = 0 v 2.8 - - typ. ? 3.5 4.3 4.8 max. on-resistance flatness r flat(on) v s = 0 v to 10 v, i s = -10 ma 0.6 - - typ. ? 1.1 1.2 1.3 max. on-resistance matching ? r on 0.08 - - typ. 0.21 0.23 0.25 max. switch off leakage current i s /i d(off) v+ = 10.8 v, v- = 0 v v s = 1 v/10 v, v d = 10 v/0 v see fig. 24 0.02 - - typ. na 0.55 2 12.5 max. channel on leakage current i d(on) v s = v d = 1 v/10 v; see fig. 25 0.15 - - typ. 1.5 4 30 max. digital control input, high voltage v inh -- 2 min. v input, low voltage v inl -- 0.8max. input leakage i in v in = v gnd or v+ 0.001 - - typ. a -- 0.1max. digital input capacitance c in 3.5 - - typ. pf dynamic characteristics break-before-make time t open v s1 = v s2 = 8 v; see fig. 31, r l = 300 ? , c l = 35 pf 130 - - typ. ns - - 40 min. turn-on time t on v s = 8 v; see fig. 30, r l = 300 ? , c l = 35 pf 210 - - typ. 250 320 360 max. turn-off time t off 80 - - typ. 135 165 190 max. charge injection q inj c l = 1 nf, r gen = 0 ? , v s = 6 v see fig. 32 14 - - typ. pc off isolation oirr r l = 50 ? , c l = 5 pf 100 khz -80 - - typ. db cross talk x talk 1 mhz -100 - - typ. insertion loss f = 1 mhz, r l = 50 ? , c l = 5 pf -0.16 - - typ. bandwidth, -3db bw r l = 50 ? , c l = 5 pf 200 - - typ. mhz source off capacitance c s(off) f = 1 mhz, v s = 6 v 17 - - typ. pf drain off capacitance c d(off) 30 - - typ. drain on capacitance c d(on) 94 - - typ. power requirements power supply range gnd = 0 v, v- = 0 v 5/ 16.5 min./max. v power supply current i+ digital inputs 0 or v+ v+ = 13.2 v 0.001 - - typ. a -- 1max. in1 = in2 = in3 = in4 = 5 v 220 - - typ. - - 380 max.
DG1411, dg1412, dg1413 www.vishay.com vishay siliconix s13-2467-rev. b, 02-dec-13 6 document number: 62749 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical characteristics - dual 5 v supplies parameter symbol test conditions unless otherwise specified v+ = 5 v, v- = -5 v v inh = 2 v, v inl = 0.8 v +25 c -40 c to +85 c -40 c to +125 c typ./max. unit analog switch analog signal range v analog 0 to v+ v drain-source on-resistance r ds(on) v s = 4.5 v, i s = -10 ma; see fig. 23, v+ = +4.5 v, v- = -4.5 v 3.3 - - typ. ? 44.9 5.4max. on-resistance flatness r flat(on) v s = 4.5 v, i s = -10 ma 0.9 - - typ. 1.1 1.24 1.31 max. on-resistance matching ? r on 0.08 - - typ. 0.22 0.23 0.25 max. switch off leakage current i s /i d(off) v+ = +5.5 v, v-= -5.5 v, v s = +/- 4.5 v, v d = -/+ 4.5 v; see fig. 24 0.03 - - typ. na 0.55 2 12.5 max. channel on leakage current i d(on) vs = vd = 4.5 v; see fig. 25 0.05 - - typ. 1 4 30 max. digital control input, high voltage v inh -- 2min. v input, low voltage v inl -- 0.8max. input leakage i in v in = v gnd or v+ 0.001 - - typ. a -- 0.1max. digital input capacitance c in 3.5 - - typ. pf dynamic characteristics break-before-make time t open v s1 = v s2 = 3 v; see fig. 31, r l = 300 ? , c l = 35 pf 150 - - typ. ns - - 50 min. turn-on time t on v s = 3 v; see fig. 30, r l = 300 ? , c l = 35 pf 300 - - typ. 400 465 510 max. turn-off time t off 150 - - typ. 290 320 380 max. charge injection q inj c l = 1 nf, r gen = 0 ? , v s = 0 v; see fig. 32 22 - - typ. pc off isolation oirr r l = 50 ? , c l = 5 pf 100 khz -80 - - typ. db cross talk x talk 1 mhz -100 - - typ. insertion loss f = 1 mhz, r l = 50 ? , c l = 5 pf -0.19 - - typ. bandwidth, -3db bw r l = 50 ? , c l = 5 pf 200 - - typ. mhz source off capacitance c s(off) f = 1 mhz, v s = 0 v 18 - - typ. pf drain off capacitance c d(off) 31 - - typ. drain on capacitance c d(on) 95 - - typ. power requirements power supply range gnd = 0 v 4.5 v/ 16.5 min./max. v power supply current i+ digital inputs 0 v or v+ v+ = +5.5 v, v- = -5.5 v 0.001 - - typ. a -- 1max. i- digital inputs = 0 v or v+ 0.001 - - typ. -- 1max.
DG1411, dg1412, dg1413 www.vishay.com vishay siliconix s13-2467-rev. b, 02-dec-13 7 document number: 62749 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) on-resistance vs. analog voltage (ds1) on-resistance vs. analog voltage (dss) on-resistance vs. temperature ( 5 v) on-resistance vs. analog voltage (ds2) on-resistance vs. temperature ( 15 v) on-resistance vs. temperature (+12 v) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -16.5 -12.5 -8.5 -4.5 -0.5 3.5 7.5 11.5 15.5 r on - on-re s i s tance () v d - analog voltage (v) v+ = +12v v- = -12v v+ = +13.5v v- = -13.5v v+ = +15v v- = -15v v+ = +16.5v v- = -16.5v v+ = +10v t a = +25 c i s = -10ma 0 1 2 3 4 5 6 7 0 2 4 6 8 10 12 14 r on - on-re s i s tance () v d - analog voltage (v) v+ = 5v v+ = 8v v+ = 13.2v v+ = 15v v+ = 10.8v v+ = 12v t a = +25 c i s = -10ma 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -5.0 -4.0 -3.0 -2.0 -1.0 0.0 1.0 2.0 3.0 4.0 5.0 r on - on-re s i s tance () v d - analog voltage (v) + 125 c v+ = +5v v- = -5v + 85 c + 25 c - 40 c i s = -10ma 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 r on - on-re s i s tance () v d - analog voltage (v) v+ = +5v v- = -5v v+ = +4.5v v- = -4.5v v+ = +5.5v v- = -5.5v v+ = +7v v- = -7v t a = +25 c i s = -10ma 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -15 -10 -5 0 5 10 15 r on - on-re s i s tance () v d - analog voltage (v) + 125 c v+ = +15v v- = -15v + 85 c + 25 c - 40 c i s = -10ma 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 1 2 3 4 5 6 7 8 9 10 11 12 r on - on-re s i s tance () v d - analog voltage (v) + 125 c v+ = +12v v- = 0v + 85 c + 25 c - 40 c i s = -10ma
DG1411, dg1412, dg1413 www.vishay.com vishay siliconix s13-2467-rev. b, 02-dec-13 8 document number: 62749 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) leakage current vs. temperature ( 15 v) leakage current vs. temperature (+12 v) charge injection vs. analog voltage leakage current vs. temperature ( 5 v) supply current vs. logic level switching time vs. temperature -25 -20 -15 -10 -5 0 5 10 20 40 60 80 100 120 leakage current (na) temperature ( c) i d(on) , v d = +10v i d(off) , v d = -10v i s (off) , v s = +10v i s ( off ) , v s = -10v i d ( off ) , v d =+10v i d ( on ) , v d = -10v v+= + 15 v v- = - 15 v -25 -20 -15 -10 -5 0 5 10 20 40 60 80 100 120 leakage current (na) temperature ( c) i d(on) , v d = +10v i d(off) , v d = +1v i s (off) , v s = +10v i d(off) , v d = +10v i s (off) , v s = +1v i d(on) , v d = +1v - 80.0 - 60.0 - 40.0 - 20.0 0.0 20.0 40.0 60.0 80.0 100.0 120.0 140.0 -15 -10 -5 0 5 10 15 q inj - charge injection (pc) v s - analog voltage (v) v+ = + 5 v v- = - 5 v v+ = +15 v v- = -15 v v+ = +12 v v- = g nd -25 -20 -15 -10 -5 0 5 10 20 40 60 80 100 120 leakage current (na) temperature ( c) i d(on) , v d = +4.5v i d(off) , v d = -4.5v i s (off) , v s = +4.5v i d(off) , v d = +4.5v i s (off) , v s = -4.5v i d(on) , v d = -4.5v 0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 12 14 16 i+ - s upply current (a) v in - (v) v+ = +13.2v v- = 0v v+ = +5.5v v- = -5.5v v+ = +16.5v v- = -16.5v t a = + 25 c i+ per logic input 0 50 100 150 200 250 300 350 400 - 40 - 20 0 20 40 60 80 100 120 t on(en) , t off(en) - s witching time (n s ) temperature ( c) v+ = +12 v, v- = 0v, t off v+ = +15 v, v- = -15 v, t off v+ = +12 v, v- = 0 v, t on v+ = +15 v, v- = -15 v, t on
DG1411, dg1412, dg1413 www.vishay.com vishay siliconix s13-2467-rev. b, 02-dec-13 9 document number: 62749 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) bw, oirr, x talk vs. frequency supply current vs. switching frequency ( 5.5 v) thd vs. frequency ( 15 v) logic threshold vs. supply voltage supply current vs. switching frequency ( 16.5 v) thd vs. frequency ( 5 v) - 110 - 100 - 90 - 80 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 10 100k 1m 10m 100m 1 g lo ss , oirr, x talk (db) fre q uency (hz) lo ss x talk oirr v+ = +15v v- = -15v 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10 1000 100 000 10 000 000 s upply current (a) input s witching fre q uency (hz) i - i + i g nd v+ = +5.5v v- = -5.5v t a = + 25 c 0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.02 0.022 0.024 0.026 0.028 0.03 10 100 1000 10 000 100 000 thd + n (%) fre q uency (hz) v s =15v p-p v s =20v p-p v s =10v p-p v+ = + 15 v v- = - 15 v 1.0 1.2 1.4 1.6 4 5 6 7 8 9 10 11 12 13 14 15 16 17 v t - logic thre s hold (v) v+ - s upply voltage (v) t a = +25 c v ih v il 0.0001 0.001 0.01 0.1 1 10 100 1000 10 000 10 1000 100 000 10 000 000 s upply current (a) input s witching fre q uency (hz) i - i + i g nd v+ = +16.5 v v- = -16.5 v t a = + 25 c 0.001 0.01 0.1 10 100 1000 10 000 100 000 thd + n (%) fre q uency (hz) v s =5v p-p v s =2.5v p-p v s =10v p-p v+ = + 5 v v- = - 5 v
DG1411, dg1412, dg1413 www.vishay.com vishay siliconix s13-2467-rev. b, 02-dec-13 10 document number: 62749 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 test circuits fig. 1 - switching time fig. 2 - charge injection fig. 3 - off-isolation fig. 4 - channel off/ on capacitance vishay siliconix maintains worldw ide manufacturing ca pability. products may be manufactured at one of several qualified locatio ns. reliability da ta for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62749 . switch input c l (includes fixture and stray capacitance) v+ in s c l 35 pf d logic input r l 300 v out gnd v+ 50 % 0 v logic input switch output t on t off logic "1" = switch on logic input waveforms inverted for switches that have the opposite logic sense. switch output v out =v d r l r l +r on 0.9 x v out t r < 5 ns t f < 5 ns v inh v inl off on on in v out v out q = v out x c l c l = 1 nf d r gen v out s v in = 0 - v+ in v gen gnd v+ v+ in depends on switch configuration: input polarity determined by sense of switch. + in gnd s 0 v, 2.4 v 10 nf d off isolation = 20 log v d v s r l analyzer v+ v+ s f = 1 mhz in d gnd 0 v, 2.4 v meter hp4192a impedance analyzer or equivalent 10 nf v+ v+
package information www.vishay.com vishay siliconix revision: 22-apr-13 1 document number: 71921 for technical questions, contact: powerictechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 qfn 4x4-16l case outline notes (1) use millimeters as the primary measurement. (2) dimensioning and tole rances conform to asme y14.5m. - 1994. (3) n is the number of terminals. nd and ne is the number of terminals in each d and e site respectively. (4) dimensions b applies to plated terminal and is measured betwee n 0.15 mm and 0.30 mm from terminal tip. (5) the pin 1 identifier must be existed on the top surface of the package by using identification mark or other feature of package body. (6) package warpage max. 0.05 mm. variation 1 variation 2 dim millimeters (1) inches millimeters (1) inches min. nom. max. min. nom. max. min. nom. max. min. nom. max. a 0.75 0.85 0.95 0.029 0.033 0.037 0.75 0.85 0.95 0.029 0.033 0.037 a1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 a3 0.20 ref. 0.008 ref. 0.20 ref. 0.008 ref. b 0.25 0.30 0.35 0.010 0.012 0.014 0.25 0.30 0.35 0.010 0.012 0.014 d 4.00 bsc 0.157 bsc 4.00 bsc 0.157 bsc d2 2.0 2.1 2.2 0.079 0.083 0.087 2.5 2.6 2.7 0.098 0.102 0.106 e 0.65 bsc 0.026 bsc 0.65 bsc 0.026 bsc e 4.00 bsc 0.157 bsc 4.00 bsc 0.157 bsc e2 2.0 2.1 2.2 0.079 0.083 0.087 2.5 2.6 2.7 0.098 0.102 0.106 k 0.20 min. 0.008 min. 0.20 min. 0.008 min. l 0.5 0.6 0.7 0.020 0.024 0.028 0.3 0.4 0.5 0.012 0.016 0.020 n (3) 16 16 16 16 nd (3) 4444 ne (3) 4444 ecn: s13-0893-rev. b, 22-apr-13 dwg: 5890 (4) (5)
vishay siliconix package information document number: 74417 23-oct-06 www.vishay.com 1 symbols dimensions in millimeters min nom max a - 1.10 1.20 a1 0.05 0.10 0.15 a2 - 1.00 1.05 b 0.22 0.28 0.38 c - 0.127 - d 4.90 5.00 5.10 e 6.10 6.40 6.70 e1 4.30 4.40 4.50 e-0.65- l 0.50 0.60 0.70 l1 0.90 1.00 1.10 y--0.10 1036 ecn: s-61920-rev. d, 23-oct-06 dwg: 5624 tssop: 16-lead
pad pattern www.vishay.com vishay siliconix revision: 02-sep-11 1 document number: 63550 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 recommended minimum pad for tssop-16 0.281 (7.15) recommended minimum pads dimensions in inches (mm) 0.171 (4.35) 0.055 (1.40) 0.012 (0.30) 0.026 (0.65) 0.014 (0.35) 0.193 (4.90)
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